Wayne State University

Aim Higher

College of Liberal Arts & Sciences
Department of Chemistry
Mass Spectrometry Profile
Yuriy Danylyuk, Ph.D.
Title Mass Spectrometry Manager
Location Mass Spectrometry Core Facility
Lumigen Instrumentation Center
A. Paul Schaap Chemistry Building
Education Ph.D., Wayne State University, 2005
Office Chem 59
Phone (313) 577-2564

Dr. Danylyuk is interested in the analysis and characterization of natural products, synthetic polymers, organic, biological, organometallic, and semi-conductor compounds by low and high-resolution mass spectrometric methods. He performs analysis using ICP-Atomic Emission Spectroscopy. His academic background in physics and thin film research has enabled him to characterize new nano-structured materials by; Optical, FTIR, and Raman spectroscopy, Spectroellipsometry and Luminescence, Reflection High Energy Electron Diffraction (RHEED), X-ray Diffractometry (XRD/HRXRD), X-ray Photoelectron Spectroscopy (XPS), Atom Force Microscopy (AFM), and Profilometry. Other skills include plasma etching (RIE and DRIE), operating PECVD systems, and performing optical lithography in 100 class clean room environment (Nano-Fab Facility).


J. S. Thakur, A. Dixit, Y. V. Danylyuk, C. Sudakar, V. M. Naik, W. J. Schaff, and R. Naik "Investigation of E1(LO) phonon-plasmon coupled modes and critical points in In1?xGaxN thin films by optical reflectance measurements," Appl. Phys. Lett., 2010, 96, 181904.

V. Gruzdev, I. Salakhutdinov, J. K. Chen, Y. Danylyuk, E. McCullen, and G. Auner, "Surface damage of thin AlN films with increased oxygen content by nanosecond and femtosecond laser pulses," in 41st Laser-Induced Damage in Optical Materials Symposium, SPIE Proc., 2009, 16, Vol. 7504

E. F. McCullen, J. S. Thakur, Y.V. Danylyuk, G. W. Auner, and L.W. Rosenberger. "Investigation of the occupation behavior of oxygen atoms in AlN films using Raman spectroscopy." J. Appl. Phys., 2008, 103, 063504.

J. S. Thakur, Y. V. Danylyuk, D. Haddad, V. M. Naik, R. Naik, and G. W. Auner. "Influence of defects on the absorption edge of InN thin films: The band gap value." Phys. Rev., 2007, B76, 035309.

I. Salakhutdinov, Y. Danylyuk, K. Chaganti, I. Avrutsky, and G. Auner, "Model-independent method for the determination of guiding thin-film optical parameters," Appl. Opt., 2006, 45, 6007-6012.

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5101 Cass Ave, Detroit, MI 48202
Phone: (313) 577-7784    Fax: (313) 577-8822

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